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2SC2767 KP110 ALN2250 9091K APT75G KP110 0EPA4 XC7S6
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 DATA SHEET
GMZJ2.0~GMZJ56
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.0 to 56 Volts
POWER
500 mWatts
MICRO-MELF
Unit : inch (mm)
FEATURES
* Planar Die construction * 500mW Power Dissipation * Ideally Suited for Automated Assembly Processes * Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above
.043(1.1) .008(0.2) .008(0.2)
.049(1.25) .047(1.2)DIA.
MECHANICAL DATA
* Case: Molded Glass MICRO-MELF * Terminals: Solderable per MIL-STD-202E, Method 208 * Polarity: See Diagram Below * Approx. Weight: 0.01 grams * Mounting Position: Any * Packing information T/R - 2.5K per 7" plastic Reel
.079(2.0) .071(1.8)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter Power Dissipation at Tamb = 25 Junction Temperature Storage Temperature Range Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
O
Symbol
Value 500 175 -65 to +175
Units mW
O
C
PTOT TJ TS
C C
O
Parameter Thermal Resi stance Juncti on to Ambi ent Ai r Forward Voltage at IF = 100mA
Symbol
Mi n. ---
Typ.
Max. 0.3 1
Uni ts K/mW V
RthA VF
---
Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
STAD-SEP.14.2004
PAGE . 1
Part Number
GMZJ 2.0 GMZJ 2.2 GMZJ 2.4 GMZJ 2.7 GMZJ 3.0 GMZJ 3.3 GMZJ 3.6 GMZJ 3.9
C LA S S
A B A B A B A B A B A B A B A B A B C A
V Z @ IZT
M i n. V 1.88 2.02 2.12 2.22 2.33 2.43 2.54 2.69 2.85 3.01 3.16 3.32 3.455 3.60 3.74 3.89 4.04 4.17 4.30 4.44 4.55 4.68 4.81 4.94 5.09 5.28 5.45 5.61 5.78 5.96 6.12 6.29 6.49 6.66 6.85 7.07 7.29 7.53 7.78 8.03 8.29 8.57 8.83 9.12 9.41 9.70 9.94 10.18 10.50 10.82 M a x. V 2.10 2.20 2.30 2.41 2.52 2.63 2.75 2.91 3.07 3.22 3.38 3.53 3.695 3.845 4.01 4.16 4.29 4.43 4.57 4.68 4.80 4.93 5.07 5.20 5.37 5.55 5.73 5.91 6.09 6.27 6.44 6.63 6.83 7.01 7.22 7.45 7.67 7.92 8.19 8.45 8.73 9.01 9.30 9.59 9.90 10.20 10.44 10.71 11.05 11.38
IZ (m A )
5 5 5 5 5 5 5 5
VR (V )
0.5 0.7 1.0 1.0 1.0 1.0 1.0 1.0
IR ( u A ) MA X
120 100 120 100 50 20 10 5
Iz t (mA )
5 5 5 5 5 5 5 5
ZZT( ) MA X
100 100 100 110 120 120 100 100
IZK (m A)
0.5 0.5 0.5 0.5 0.5 0.5 1 1
ZZK( ) MA X
1000 1000 1000 1000 1000 1000 1000 1000
GMZJ 4.3
5
1.0
5
5
100
1
1000
GMZJ 4.7
B C A
5
1.0
5
5
90
1
900
GMZJ 5.1
B C A
5
1.5
5
5
80
1
800
GMZJ 5.6
B C A
5
2.5
5
5
60
1
500
GMZJ 6.2
B C A
5
3.0
5
5
60
1
300
GMZJ 6.8
B C A
5
3.5
2
5
20
0.5
150
GMZJ 7.5
B C A
5
4.0
0.5
5
20
0.5
120
GMZJ 8.2
B C A
5
5.0
0.5
5
20
0.5
120
GMZJ 9.1
B C A B C D A
5
6.0
0.5
5
25
0.5
120
GMZJ 10
5
7.0
0.2
5
30
0.5
120
GMZJ 11
B C
5
8.0
0.2
5
30
0.5
120
STAD-SEP.14.2004
PAGE . 2
Part Number
C LA S S
A
V Z @ IZT
M i n. V 11.13 11.44 11.74 12.11 12.55 12.99 13.44 13.89 14.35 14.80 15.25 15.69 16.22 16.82 17.42 18.02 18.63 19.23 19.72 20.15 20.64 21.08 21.52 22.05 22.61 23.12 23.63 24.26 24.97 25.63 26.29 26.99 27.70 28.36 29.02 29.68 30.32 30.90 31.49 32.14 32.79 33.40 34.01 34.68 35.36 36.00 36.63 40.00 44.00 48.00 53.00 M a x. V 11.71 12.03 12.35 12.75 13.21 13.66 14.13 14.62 15.09 15.57 16.04 16.51 17.06 17.70 18.33 18.96 19.59 20.22 20.72 21.20 21.71 22.17 22.63 23.18 23.77 24.31 24.85 25.52 26.26 26.95 27.64 28.39 29.13 29.82 30.51 31.22 31.88 32.50 33.11 33.79 34.49 35.13 35.77 36.47 37.19 37.85 38.52 45.00 49.00 54.00 60.00
IZ (m A )
5
VR (V )
9.0
IR ( u A ) MA X
0.2
Iz t (mA )
5
ZZT( ) MA X
30
IZK (m A)
0.5
ZZK() MA X
110
GMZJ 12
B C A
GMZJ 13
B C A
5
10
0.2
5
35
0.5
110
GMZJ 15
B C A
5
11
0.2
5
40
0.5
110
GMZJ 16
B C A
5
12
0.2
5
40
0.5
150
GMZJ 18
B C A B C D A B C D A B C D A B C D A B C D A B C D A B C D A B C D
5
13
0.2
5
45
0.5
150
GMZJ 20
5
15
0.2
5
55
0.5
200
GMZJ 22
5
17
0.2
5
30
0.5
200
GMZJ 24
5
19
0.2
5
35
0.5
200
GMZJ 27
5
21
0.2
5
45
0.5
250
GMZJ 30
5
23
0.2
5
55
0.5
250
GMZJ 33
5
25
0.2
5
65
0.5
250
GMZJ 36
5
27
0.2
5
75
0.5
250
GMZJ 39
5
30
0.2
5
85
0.5
250
GMZJ 43 GMZJ 47 GMZJ 51 GMZJ 56
5 5 5 5
33 36 39 43
0.2 0.2 0.2 0.2
5 5 5 5
90 90 110 110
-----
-----
STAD-SEP.14.2004
PAGE . 3
Typical Characteristics (Tamb = 25 C unless otherwise specified)
RthJA -Therm.Resist.Junction/ Ambient ( K/W)
500
VZtn - Relative VoltageChange
1.3
V Ztn=V Zt/V Z(25C)
400
1.2 1.1 1.0 0.9 0.8 -60
TK VZ =10 x 10-4/K
300
l l
8 x 10-4/K 6 x 10-4/K 4 x 10-4/K 2 x 10-4/K 0 -2 x 10-4/K -4 x 10-4/K
200 100
TL=constant
0 0 5 10 15 20 l - Lead Length ( mm )
0
60
120
180
240
95 961 1
95 9599
Tj - Junction Temperature (C )
Fig. 1 Thermal Resistance vs. Lead Length
Fig. 4 Typical Change of Working Voltage vs. Junction Temperature
TK VZ -Temperature Coefficient of VZ ( 10-4 /K)
P -Total Power Dissipation ( mW) tot
600 500 400 300
15
10
5
I Z=5mA
200
100 0
0
-5 0 10 20 30
40
0
40
80
120
160
200
50
95 9602
Tamb - Ambient T emperature(C )
95 9600
V Z - Z-Voltage ( V )
Fig. 2 Total Power Dissipation vs. Ambient Temperature
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
1000
CD - Diode Capacitance ( pF )
200
VZ -VoltageChange mV ) (
Tj =25C 100
150
V R=2V Tj =25C
100
I Z=5mA 10
50
1 0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V Z - Z-Voltage ( V )
V Z - Z-Voltage ( V )
Fig. 3 Typical Change of Working Voltage under Operating Conditions at Tamb=25C
Fig. 6 Diode Capacitance vs. Z-Voltage
STAD-SEP.14.2004
PAGE . 4
100
I F - Forward Current ( mA)
50 40 30 20 10 0
Ptot=500mW Tamb=25C
Tj =25C
1
0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0
IZ - Z-Current ( mA)
10
15
95 9607
20
25
30
35
95 9605
V F - Forward Voltage ( V )
V Z - Z-Voltage ( V )
Fig. 7 Forward Current vs. Forward Voltage
Fig. 9 Z-Current vs. Z-Voltage
IZ - Z-Current ( mA)
80 60 40 20 0
0 4 8 12
r Z - Differential Z-Resistance ( )
100
1000
Ptot=500mW Tamb=25C
I Z=1mA
100
5mA
10 10mA
1
Tj =25C
0 5 10 15 20 25 V Z - Z-Voltage ( V )
16
20
95 9606
95 9604
V Z - Z-Voltage ( V )
Fig. 8 Z-Current vs. Z-Voltage
Zthp -ThermalResistance PulseCond.(K/W) for
Fig. 10 Differential Z-Resistance vs. Z-Voltage
1000
tp/T=0.5
100
tp/T=0.2
Single Pulse 10
tp/T=0.1
RthJA=300K/W T=Tjmax-Tamb
tp/T=0.01 tp/T=0.02
tp/T=0.05
i ZM =(-VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj)
100 101 tp - Pulse Length ( ms ) 102
1 10-1
95 9603
Fig. 11 Thermal Response
STAD-SEP.14.2004
PAGE . 5


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